MULTINANO/3-300 fully automatic wafer grinding machine with two spindles
High precision fully automatic wafer grinding machine with two spindles and cassette-to-cassette operation.
Application
Fully automatic grinding of semiconductor wafers up to 300 mm diameter.
Thin grinding down to 100 µm final thickness.
MULTINANO/3-300 Details
Spindles
The machine is equipped with two independent spindles (ball bearing: up to 4.000rpm, air bearing up to 6.000rpm). One Spindle position can be equipped with a TWIN SPINDLE.
Fine downfeed
Each spindle is mounted on an independent slide. All parameters of each spindle is programmable independently.
Minimum infeed step is 0.1 µm.
Rotary table
The air-bearing CNC indexing table transports the wafer between roughing, finishing and loading / unloading stations. The three rotary chucks are built into the table. Each vacuum chuck (all ceramic chucks) is mounted on a high-precision spindle.
Handling
The machine is equiped with one wafer handling with
- high speed robot
- wafer transport system
- centering station
- wafer cleaning unit
- up to four cassettes.
In-Process gaging
In-process thickness gaging is utilized to measure wafer thickness during grinding by using contact probes (differential measurement principle).
Since the control always knows the actual wafer thickness and wheel position, it can stop the infeed, when the required wafer thickness is reached. In this way, the optimum in thickness accuracy can be achieved.
Thus thermal influences and tool wear have no significant effects.
Pictures
Technical data
| Wafer size | 3 inch bis 300 mm |
| Spindles | |
| Speed | 100 - 4000 min-1 (ball bearing) / 100 - 6000min-1 (air bearing) |
| Output | 4 kW |
| Grinding wheels | 250 mm Diamond |
| Fine Infeed | |
| Speed | 0,001 - 50 mm/min |
| Min. step | 0,1 µm |
| Resolution | 0,1 µm |
| In-Process-Gaging | |
| Range | 0-1200 µm |
| Resolution | 0,06 µm |
| Accuracy | 0,1 µm |
| Rotary table | |
| Number of chucks | 3 |
| Type of chucks | Porous ceramics |
| Speed | 0 - 600 min-1 |
| Throughput | 50 Wafer/h (dep. on process) |
| Accuracy | |
| TTV | <2 µm |
| Variation | <2µm |
| Surface quality | Rmax = <0,01 µm (dep. on process) |
| Power connection | 20 kW |
| Weight | 6500 kg |
| Space | 3914 x 2530 mm |




